Numerical modeling tools for chemical vapor deposition
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Numerical modeling tools for chemical vapor deposition

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Published by National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program, National Technical Information Service, distributor] in [Washington, D.C.], [Springfield, Va .
Written in

Subjects:

  • Plasma-enhanced chemical vapor deposition.,
  • Fluid dynamics.

Book details:

Edition Notes

StatementThomas J. Jasinski and Edward P. Childs.
SeriesNASA contractor report -- 4480., NASA contractor report -- NASA CR-4480.
ContributionsUnited States. National Aeronautics and Space Administration. Scientific and Technical Information Program.
The Physical Object
FormatMicroform
Pagination97 p.
Number of Pages97
ID Numbers
Open LibraryOL14689242M

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Mathematical models for chemical vapor deposition. Abstract. A generally applicable CVD simulation model may consist of a set of partial differential equations with appropriate boundary conditions, describing the gas flow, the transport of energy and species and the chemical reactions Cited by: 1. Chem. Vap. Deposition, , 21, DOI: /cvde The original article presented the modeling for non‐steady evaporation processes of liquid solution droplets injected into a pumped‐down low‐pressure vessel having a specified wall by: 2. The numerical modeling solves mass, heat, and momentum continuity equations on liquid droplets, and is intended to evaluate the relative roles of the physical chemistry properties and reactor parameters in the fast vaporization of by: 2. We are motivated to model PE-CVD (plasma enhanced chemical vapor deposition) processes for metallic bipolar plates, and their optimization for depositing a heterogeneous layer on the metallic plate. Moreover a constraint to the deposition process is a very low pressure (nearly a vacuum) and a low temperature (about &#x;K).Cited by: 1.